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symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 54 ? i d @ t c = 100c continuous drain current, v gs @ 10v 38 ? a i dm pulsed drain current ? 210 p d @t c = 25c maximum power dissipation 71 w p d @t a = 25c maximum power dissipation ? 3.8 w linear derating factor 0. 48 w/c t j , t stg junction and storage temperature range -55 to + 175 c www.irf.com 1 6/5/01 irl3715 IRL3715S irl3715l smps mosfet hexfet ? power mosfet notes ? through ? are on page 11 absolute maximum ratings d 2 pak IRL3715S to-220ab irl3715 to-262 irl3715l thermal resistance parameter typ. max. units r q jc junction-to-case CCC 2.1 r q cs case-to-sink, flat, greased surface ? 0.50 CCC c/w r q ja junction-to-ambient ? CCC 62 r q ja junction-to-ambient (pcb mount) ? CCC 40 applications benefits l ultra-low gate impedance l very low r ds(on) at 4.5v v gs l fully characterized avalanche voltage and current l high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use l high frequency buck converters for computer processor power v dss r ds(on) max i d 20v 14m w 54a ? pd - 94194a
irl3715/s/l 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. CCC 0.9 1.3 v t j = 25c, i s = 21a, v gs = 0v ? CCC 0.8 CCC t j = 125c, i s = 21a, v gs = 0v ? t rr reverse recovery time CCC 37 56 ns t j = 25c, i f = 21a, v r =20v q rr reverse recovery charge CCC 28 42 nc di/dt = 100a/s ? t rr reverse recovery time CCC 38 57 ns t j = 125c, i f = 21a, v r =20v q rr reverse recovery charge CCC 30 45 nc di/dt = 100a/s ? dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 110 mj i ar avalanche current ? CCC 21 a avalanche characteristics s d g diode characteristics 54 ? 210 a symbol parameter min. typ. max. units conditions g fs forward transconductance 26 CCC CCC s v ds = 10v, i d = 21a q g total gate charge CCC 11 17 i d = 21a q gs gate-to-source charge CCC 3.8 CCC nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 4.4 CCC v gs = 4.5v q oss output gate charge CCC 11 17 v gs = 0v, v ds = 10v t d(on) turn-on delay time CCC 6.4 CCC v dd = 10v t r rise time CCC 73 CCC i d = 21a t d(off) turn-off delay time CCC 12 CCC r g = 1.8 w t f fall time CCC 5.1 CCC v gs = 4.5v ? c iss input capacitance CCC 1060 CCC v gs = 0v c oss output capacitance CCC 700 CCC v ds = 10v c rss reverse transfer capacitance CCC 120 CCC pf ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.022 CCC v/c reference to 25c, i d = 1ma CCC 11 14 v gs = 10v, i d = 26a ? CCC 15 20 v gs = 4.5v, i d = 21a ? v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 16v, v gs = 0v CCC CCC 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 16v gate-to-source reverse leakage CCC CCC -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m w
irl3715/s/l www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.5v 3.3v 3.0v 2.7v 2.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.5v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 52a
irl3715/s/l 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.1 1 10 100 0.2 0.7 1.2 1.7 2.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 0 5 10 15 20 25 0 2 4 6 8 10 12 14 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 21a v = 10v ds v = 16v ds
irl3715/s/l www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package
irl3715/s/l 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 4.5 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.5a 15a 21a r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v v gs
irl3715/s/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irl3715/s/l 8 www.irf.com lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.3 6 (.014 ) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 o utline conforms to jedec outline to-220ab. 2 c o n tr o llin g d im e n s io n : in c h 4 h e a t s in k & le a d m e a s u r e m e n t s d o n ot include burrs. to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) example: t his is an irf1010 lot code 1789 as s emble d on ww 19, 1997 in the assembly line "c" int ernational rect if ier logo as s e mb l y lot code part number dat e code year 7 = 1997 we e k 19 line c
irl3715/s/l www.irf.com 9 d 2 pak package outline d 2 pak part marking information f 530s this is an irf530s with lot code 8024 as s embled on ww 02, 2000 in the assembly line "l" assembly lot code int ernational rectifier logo part number dat e code year 0 = 2000 we e k 02 line l
irl3715/s/l 10 www.irf.com to-262 part marking information to-262 package outline example: t his is an irl3103l lot code 1789 as s e mb l y part number dat e code we e k 19 line c l ot code ye ar 7 = 1997 as s e mbled on ww 19, 1997 in the assembly line "c" logo rect if ier international
irl3715/s/l www.irf.com 11 ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 0.51mh r g = 25 w , i as = 21a,v gs =10v ? pulse width 400s; duty cycle 2%. ? this is only applied to to-220a package d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. ? this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 6/01

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